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Substrate-induced phase of a [1]benzothieno[3,2-b]benzothiophene derivative and phase evolution by aging and solvent vapor annealing

机译:底物诱导的[1]苯并噻吩并[3,2-b]苯并噻吩衍生物的相以及通过时效和溶剂蒸气退火进行的相演化

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摘要

Substrate-induced phases (SIPs) are polymorphic phases that are found in thin films of a material and are different from the single crystal or "bulk" structure of a material. In this work, we investigate the presence of a SIP in the family of [1]benzothieno[3,2-b]benzothiophene (BTBT) organic semiconductors and the effect of aging and solvent vapor annealing on the film structure. Through extensive X-ray structural investigations of spin coated films, we find a SIP with a significantly different structure to that found in single crystals of the same material forms; the SIP has a herringbone motif while single crystals display layered π-π stacking. Over time, the structure of the film is found to slowly convert to the single crystal structure. Solvent vapor annealing initiates the same structural evolution process but at a greatly increased rate, and near complete conversion can be achieved in a short period of time. As properties such as charge transport capability are determined by the molecular structure, this work highlights the importance of understanding and controlling the structure of organic semiconductor films and presents a simple method to control the film structure by solvent vapor annealing.
机译:衬底诱导相(SIP)是在材料薄膜中发现的多态相,它不同于材料的单晶或“本体”结构。在这项工作中,我们调查[1] benzothieno [3,2-b]苯并噻吩(BTBT)有机半导体家族中SIP的存在以及老化和溶剂蒸汽退火对薄膜结构的影响。通过对旋涂膜进行广泛的X射线结构研究,我们发现SIP的结构与相同材料形式的单晶中的SIP明显不同。 SIP具有人字形图案,而单晶则显示分层的π-π堆叠。随着时间的流逝,发现膜的结构缓慢地转变为单晶结构。溶剂气相退火引发了相同的结构演化过程,但是速率大大提高,并且可以在短时间内实现接近完全的转化。由于诸如电荷传输能力等性质是由分子结构决定的,这项工作凸显了理解和控制有机半导体膜结构的重要性,并提出了一种通过溶剂蒸汽退火控制膜结构的简单方法。

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